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IXTH1N200P3HV

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IXTH1N200P3HV Image

The IXTH1N200P3HV from Littelfuse is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 40000 Milliohm, Drain Source Breakdown Voltage 2000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IXTH1N200P3HV can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTH1N200P3HV
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 23.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    40000 Milliohm
  • Drain Source Breakdown Voltage
    2000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    23.5 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    High Voltage Power Supplies, Capacitor Discharge Applications, Pulse Circuits, Laser and X-Ray Generation Systems

Technical Documents
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