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PSMN009-100P

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PSMN009-100P Image

The PSMN009-100P from Nexperia is a MOSFET with Continous Drain Current 65 to 75 A, Drain Source Resistance 7.5 to 23.8 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.4 V. Tags: Through Hole. More details for PSMN009-100P can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN009-100P
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 156 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    65 to 75 A
  • Drain Source Resistance
    7.5 to 23.8 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.4 V
  • Gate Charge
    156 nC
  • Power Dissipation
    230 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    High frequency computer motherboard, DC-to-DC convertors, OR-ing applicationss

Technical Documents
View details on the manufacturer's website
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