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FDS89161

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FDS89161 Image

The FDS89161 from onsemi is a MOSFET with Continous Drain Current 2.7 A, Drain Source Resistance 105 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDS89161 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS89161
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 31 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.7 A
  • Drain Source Resistance
    105 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    1.7 to 4.1 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Synchronous rectifier, Primary switch

Technical Documents
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