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NTGS3446T1G

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The NTGS3446T1G from onsemi is a MOSFET with Continous Drain Current 5.1 A, Drain Source Resistance 36 to 55 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for NTGS3446T1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTGS3446T1G
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.1 A
  • Drain Source Resistance
    36 to 55 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    8 to 15 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Power Management in portable and battery-powered products, i.e. computers, printers, PCMCIA cards, cellular and cordless, Lithium Ion Battery Applications, Notebook PC

Technical Documents
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