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BST500D08P4A104

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The BST500D08P4A104 from ROHM Semiconductor is a MOSFET with Continous Drain Current 506 A, Drain Source Resistance 2 to 4 milli-ohm, Drain Source Breakdown Voltage 750 V, Gate Source Voltage -4 to 21 V, Gate Source Threshold Voltage 2.8 to 4.8 V. Tags: Surface Mount. More details for BST500D08P4A104 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BST500D08P4A104
  • Manufacturer
    ROHM Semiconductor
  • Description
    -4 to 21 V, 506 A N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    506 A
  • Drain Source Resistance
    2 to 4 milli-ohm
  • Drain Source Breakdown Voltage
    750 V
  • Gate Source Voltage
    -4 to 21 V
  • Gate Source Threshold Voltage
    2.8 to 4.8 V
  • Gate Charge
    1042 nC
  • Power Dissipation
    1667 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Inverter, Converter, (Hybrid) electrical vehicles EV/HEV

Technical Documents
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