The GCMX020A120B2H2P from SemiQ is a Silicon Carbide Full Bridge MOSFET that is designed for photovoltaic inverters, battery chargers, energy storage systems and high voltage DC to DC converters. It has a drain-source breakdown voltage of over 1200, a gate threshold voltage of up to 4 V and a drain-source resistance of 18 milli-ohms. This silicon carbide (SiC) MOSFET has a continuous drain current of 102 A and a pulsed drain current of 250 A. It has a power dissipation of less than 333 W. This MOSFET has all its parts tested to above 1350V and has split DC negative terminals. It offers high-speed switching operation with low switching losses. This RoHS-compliant MOSFET is available as a module that measures 33.8 x 62.8 x 15 mm.
