The GCMX080B120S1-E1 from SemiQ is an N-Channel Enhancement Mode SiC MOSFET that is designed for PFC boost converter, DC-DC converter primary switching, and synchronous rectification. It has a drain-source breakdown voltage of over 1200 V and a drain-source resistance of 77 milliohms. This MOSFET has a gate threshold voltage of 2.8 V and a power dissipation of up to 142 W. It has a continuous drain current of 30 A and a pulsed drain current of 80 A. The MOSFET consists of a silicon carbide (SiC) Schottky diode that delivers optimum performance without any trade-offs made with silicon devices. It offers high-speed switching operation with low switching losses and provides a simple drive mechanism.

This RoHS compliant MOSFET is available in a through-hole package that measures 38 x 25.15 mm and is ideal for use in PFC boost converters, DC-to-DC converter primary switching, synchronous rectification, and server power supplies, energy storage systems, battery chargers, and photovoltaic inverter applications.