The S2M0025120K from SMC Diode Solutions is a SiC Power MOSFET that has been designed for energy-sensitive, high-frequency applications in challenging environments. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 25 milli-ohms. This MOSFET has a continuous drain current of up to 63 A and a power dissipation of less than 446 W. It has low switching losses and is provided with a very fast and robust intrinsic body diode that offers very low total conduction losses and stable switching characteristics with temperature. This RoHS-compliant MOSFET exhibits positive temperature characteristics and is suitable for parallel operations. It is available in a through-hole package that measures 39.71 x 15.5 x 4.8 mm and is ideal for EV fast charging modules, EV on-board chargers, solar inverters, online UPS/industrial UPS, switch mode power supplies (SMPS), DC-DC converters, and energy storage systems (ESS) applications.
