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SSM6K517NU

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The SSM6K517NU from Toshiba is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 30 to 82 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -8 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6K517NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K517NU
  • Manufacturer
    Toshiba
  • Description
    2.5 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    30 to 82 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -8 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    3.2 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6B
  • Applications
    Power Management Switches, High-Speed Switching

Technical Documents
View details on the manufacturer's website
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