MOSFETs - Page 140

18400 MOSFETs from 61 manufacturers meet your specification.
Description:30 V, 0.68 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.68 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.35 to 0.7 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Inductive loads switching
more info
Description:-60 V, 45 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
3.4 to 53.2 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
2.01 W
Package:
PS-8
Applications:
Motor Drivers, Mobile Equipment
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 to 298 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.5 to 0.8 milli-ohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 89 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.7 to 7.02 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
High power density DC/DC, Synchronous rectificatio...
more info
Description:-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
600 to 680 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
Description:-150 V, 55 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3P
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:60 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2 to 5.6 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
349 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Applications:
Battery-powered tools, Load switching, Motor contr...
more info
Description:-30 V, 3 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
110 to 230 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
Description:40 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.2 to 6.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
76 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
Description:-20 to 20 V, 85 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
203 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.7 to 2.1 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5
Industry:
Automotive, Commercial, Industrial
Applications:
Switching power supplies, Power switches (High Sid...
more info

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