MOSFETs - Page 291

18461 MOSFETs from 62 manufacturers meet your specification.
Description:500 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1300 to 1600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
28.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FL
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
Description:600 V Low-Radiation Noise N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
980 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
9.1 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
Switching applications
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 to 50 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.9 to 3.2 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.5 to 6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TISON-8
Industry:
Industrial, Commercial
Applications:
Desktop and server, Single-phase & multiphase POL...
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
2.3 to 3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC conversion - Low side switch, Notebook, Serv...
more info
Description:-20 to 20 V, 9 to 23 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.4 to 12.6 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFNW8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-30 to 30 V, 30 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
410 to 500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
Description:-50 V, 200 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-140 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
9 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-25 to 25 V, 16.2 to 33.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 17000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-8 to 19 V, 162 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
74 to 100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
21 to 38 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
469 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO 247-4
Applications:
Solar inverters, EV motor drive, High voltage DC/D...
more info
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
543 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial
Applications:
PFC and other boost converter, Buck converter, Two...
more info

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