MOSFETs - Page 292

18461 MOSFETs from 62 manufacturers meet your specification.
Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 to 280 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.93 to 2.45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
198 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK56E
Applications:
Synchronous rectification, DC-to-DC converters, Hi...
more info
Description:-20 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
300 to 560 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
15 to 26 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
32.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
Description:150 V, 5 to 8 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.4 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
392 to 520 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.3 to 2.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-26
Industry:
Commercial, Industrial
Applications:
Battery Management System, LED Lighting
more info
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
250 to 290 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
181 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2-PAK
Industry:
Commercial, Industrial
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
150 to 10000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23(TO-236)
Industry:
Commercial, Industrial
Applications:
Switching
more info
Description:20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
0.65 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
250 to 800 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.3 W
Temperature operating range:
-65 to 150 Degree C
Package:
SOT-523
Industry:
Industrial, Commercial
Applications:
Load/Power switches, Power supply converter circui...
more info
Description:-10 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.016 to -0.008 A
Drain Source Breakdown Voltage:
-10 V
Drain Source Resistance:
180000 to 270000 milliohm
Gate Source Voltage:
-10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
8-Pin SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:-25 to 25 V, 18.4 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.0 to 11.0 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.36 to 0.403 ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
69.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
Soft-switching Applications, Motor drive, Adapters...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
60 to 115 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23 6L
Industry:
Commercial, Military
more info

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