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MOSFETs - Page 297

18461 MOSFETs from 62 manufacturers meet your specification.
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Hunan Jingxin Microelectronics - ES4435

MOSFET from Hunan Jingxin Microelectronics
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Description:-30 V, -8.0 to -10.5 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8.0 to -10.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13.5 to 27 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM8N60C

MOSFET from JSMicro Semiconductor
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Description:600 V, 5.1 to 8.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.1 to 8.0 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1.0 to 1.2 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
51 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
High Frequency switching mode power supplies, Acti...
more info
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First Silicon - FTK4828

MOSFET from First Silicon
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Description:60 V, 4.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
56 to 77 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
more info
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Cystech Electronics - MTB040P03SN3-0-T1-G

MOSFET from Cystech Electronics
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Description:-30 V, -2.6 to -3.3 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.6 to -3.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
35 to 100 milii-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
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PFC Device - PRM013N12CTF

MOSFET from PFC Device
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Description:120 V, 30 to 49 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 49 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
10 to 13 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM3014S

MOSFET from uPI Semiconductor
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Description:30 V, 7 to 9 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
10 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Small pow...
more info
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Isahaya Electronics - INK0010AC1

MOSFET from Isahaya Electronics
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Description:60 V, 260 to 800 mA, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
260 to 800 mA
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.0 to 4.0 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
TK40S06N1L Image
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Toshiba - TK40S06N1L

MOSFET from Toshiba
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Description:60 V, 26 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8.7 to 18 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
88.2 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RJK0852DPB Image
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Renesas - RJK0852DPB

MOSFET from Renesas
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Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
9 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
HP8KE6TB1 Image
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ROHM Semiconductor - HP8KE6TB1

MOSFET from ROHM Semiconductor
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Description:100 V Dual N-Channel Power MOSFET for Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
41 to 73 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 to 21 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Industry:
Commercial, Industrial
Applications:
Ideal for switching applications
more info
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