MOSFETs - Page 298

18461 MOSFETs from 62 manufacturers meet your specification.
Description:-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2.3 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
44 to 130 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TSOP6-6
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
81.2 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.5 to 6.1 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
46.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, High power density DC/D...
more info
Description:-20 to 20 V, 4.5 to 9.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.7 to 13 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:-20 to 20 V, 12 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
24 to 40 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
DC to 175 Degree C
Package:
PowerFLAT 5x6
Applications:
Switching applications
more info
Description:-600 V, 92 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
790 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
PLUS247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push-Pull Amplifiers, DC Chopp...
more info
Description:-25 to 25 V, 31.2 to 64.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
4500 to 16000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
80 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI5060-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-8 to 19 V, 99 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 66 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 68 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
326 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO 247-4
Applications:
Solar inverters, EV motor drive, High voltage DC/D...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1135 W
Temperature operating range:
-55 to 150 Degree C
Package:
T-MAX
Industry:
Commercial, Military
more info
Description:25 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.89 to 2.43 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Applications:
On-board DC-DC solutions for server and telecommun...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1000 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.125 W
Temperature operating range:
150 Degree C
Package:
SOT-666
Industry:
Industrial, Commercial
more info

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