MOSFETs - Page 294

18461 MOSFETs from 62 manufacturers meet your specification.
Description:75 V, 36.1 to 57 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36.1 to 57 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
12 to 14.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:-20 V, -2.8 to -3.5 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.8 to -3.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
60 to 105 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.32 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
Description:-20 V, -200 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-70
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
Description:-20 to 20 V, 1.23 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.33 to 0.5 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
460 to 3600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High-Speed Switching Applications
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.9 to 10 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Automotive
Applications:
Power Switching
more info
Description:100 V N/P-Channel MOSFET for Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
303 milli-ohm
Power Dissipation:
20 W
Applications:
Switching and Motor Drive Applications
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
135 to 290 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TSDSON-6
Industry:
Industrial, Commercial
Applications:
Charge and discharge switch for battery applicatio...
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.5 to 7.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification, Synchronous Buck Conver...
more info
Description:-20 to 20 V, 19 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
8.5 to 9.5 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
107 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFNW8
Industry:
Automotive, Commercial, Industrial
Applications:
Switching power supplies, Power switches (High Sid...
more info
Description:-30 to 30 V, 34 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.2 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
1100 to 1350 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info

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