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MOSFETs - Page 307

18461 MOSFETs from 62 manufacturers meet your specification.
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Isahaya Electronics - INK0012AC1

MOSFET from Isahaya Electronics
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Description:30 V, 200 mA, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.0 to 1.7 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
SSM6L36FE Image
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Toshiba - SSM6L36FE

MOSFET from Toshiba
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Description:-20 to 20 V, 1.23 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.33 to 0.5 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
460 to 3600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-363
Applications:
High-Speed Switching Applications
more info
RJK0452DPB Image
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Renesas - RJK0452DPB

MOSFET from Renesas
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Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 to 4.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RS6G100BGTB1 Image
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ROHM Semiconductor - RS6G100BGTB1

MOSFET from ROHM Semiconductor
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Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Applications:
Switching
more info
IRF7904PbF Image
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Infineon Technologies - IRF7904PbF

MOSFET from Infineon Technologies
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.1 to 11 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.6 to 20.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
Applications:
Dual SO-8 MOSFET for POL Converters in Notebook Co...
more info
SiR826BDP-T1-RE3 Image
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Vishay - SiR826BDP-T1-RE3

MOSFET from Vishay
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Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80.8 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.35 to 6.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - RFD14N05LSM

MOSFET from onsemi
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Description:-10 to 10 V, 40 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
100 mohms
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
Applications:
AC-DC Merchant Power Supply - Servers & Workstatio...
more info
STU5N95K5 Image
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STMicroelectronics - STU5N95K5

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 12.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
2000 to 2500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
IXTR170P10P Image
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Littelfuse - IXTR170P10P

MOSFET from Littelfuse
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Description:-100 V, 240 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-100 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
15.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
312 W
Temperature operating range:
-55 to 150 Degree C
Package:
PLUS247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
DMP3037LSSQ Image
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Diodes Incorporated - DMP3037LSSQ

MOSFET from Diodes Incorporated
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Description:-20 to 20 V, 8.2 to 17.3 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
19 to 50 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
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