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MOSFETs - Page 341

18461 MOSFETs from 62 manufacturers meet your specification.
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PFC Device - PRM013N12CT

MOSFET from PFC Device
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Description:120 V, 52 to 82 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 to 82 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
10 to 13 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QN3102M6N

MOSFET from uPI Semiconductor
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Description:30 V, 10 to 61 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 61 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.0 to 10.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK5X6
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INK0001AM1

MOSFET from Isahaya Electronics
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Description:50 V, 100 mA, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 mA
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
3.5 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-70
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
SSM6P35FE Image
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Toshiba - SSM6P35FE

MOSFET from Toshiba
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Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
4300 to 4400 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
ES6
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
RJK0355DSP Image
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Renesas - RJK0355DSP

MOSFET from Renesas
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.5 to 16.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
QS6K21FRA Image
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ROHM Semiconductor - QS6K21FRA

MOSFET from ROHM Semiconductor
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Description:45 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
300 to 585 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Automotive
Applications:
Switching
more info
IRF7316PbF Image
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Infineon Technologies - IRF7316PbF

MOSFET from Infineon Technologies
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Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
42 to 98 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
SiRC18DP-T1-GE3 Image
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Vishay - SiRC18DP-T1-GE3

MOSFET from Vishay
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.85 to 1.54 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
54.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous buck, Synchronous rectification, DC/DC...
more info
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onsemi - NVMFS5C628NWFT1G

MOSFET from onsemi
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Description:-20 to 20 V, 34 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.3 to 3 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
STL6P3LLH6 Image
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STMicroelectronics - STL6P3LLH6

MOSFET from STMicroelectronics
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Description:-20 to 20 V, 12 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
24 to 50 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.9 W
Temperature operating range:
DC to 150 Degree C
Package:
PowerFLAT 3.3x3.3
Applications:
Switching applications
more info
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