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MOSFETs - Page 344

18461 MOSFETs from 62 manufacturers meet your specification.
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Cystech Electronics - MTB3D2N04RH8-0-T6-G

MOSFET from Cystech Electronics
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Description:40 V, 16 to 60 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 60 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 to 5.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5×6
Industry:
Industrial, Commercial
more info
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PFC Device - PRM4R2N08CT

MOSFET from PFC Device
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Description:80 V, 103 to 164 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
103 to 164 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.2 to 9.5 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
192 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QN3120M3N

MOSFET from uPI Semiconductor
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Description:30 V, 16 to 104 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 104 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.4 to 4.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3X3
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INJ0002AU1

MOSFET from Isahaya Electronics
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Description:-30 V, -200 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-75A
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
TPCP8009 Image
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Toshiba - TPCP8009

MOSFET from Toshiba
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Description:40 V, 25.1 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
9.5 to 19.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.01 W
Package:
PS-8
Applications:
Motor Drivers, Mobile Equipment
more info
UPA1809GR Image
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Renesas - UPA1809GR

MOSFET from Renesas
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
17 to 32 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP
Industry:
Commercial, Industrial
more info
R8007AND3FRA Image
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ROHM Semiconductor - R8007AND3FRA

MOSFET from ROHM Semiconductor
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Description:800 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1200 to 1600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
BSC112N06LD Image
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Infineon Technologies - BSC112N06LD

MOSFET from Infineon Technologies
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.5 to 15.8 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
Applications:
SMPS, Inductive wireless charging, Load switches, ...
more info
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Vishay - SiS413DN-T1-GE3

MOSFET from Vishay
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Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7.6 to 13.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Adaptor Switch, Load Switch, Power Management, Mob...
more info
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onsemi - NVMFS5C646NLAFT1G

MOSFET from onsemi
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Description:-20 to 20 V, 15.7 to 33.7 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
93 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.8 to 6.3 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
79 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
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