MOSFETs - Page 360

18461 MOSFETs from 62 manufacturers meet your specification.
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.5 to 2.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
Description:-60 to 60 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
46 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
49 to 98 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
219 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.86 to 1.6 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, OR-ing, High power dens...
more info
Description:-20 to 20 V, 18.4 to 40.7 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
133 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.6 to 4.2 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:-30 to 30 V, 46.5 to 60.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.8 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1560 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
Description:-50 V, 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-32 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
39 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-25 to 25 V, 25 to 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 18000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-10 to 25 V, 120 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
44 to 82 Milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO 247-3
Applications:
Solar Inverters, Switch Mode Power Supplies, High ...
more info
Description:350 V, 0.72 to 0.135 A, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.72 to 0.135 A
Drain Source Breakdown Voltage:
350 V
Drain Source Resistance:
35000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.36 to 1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23, SOT-89
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Solid state relays, Converte...
more info

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