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MOSFETs - Page 359

18461 MOSFETs from 62 manufacturers meet your specification.
GT100N12M Image
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Goford Semiconductor - GT100N12M

MOSFET from Goford Semiconductor
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Description:120 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
8 to 10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
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Advanced Power Electronics Corp - AP15NA4R4TL

MOSFET from Advanced Power Electronics Corp
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Description:150 V, 118 to 167 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
118 to 167 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
4.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESGNN15R038

MOSFET from Hunan Jingxin Microelectronics
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Description:150 V, 68 to 107 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 to 107 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
4.4 to 5.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - FDMA905P

MOSFET from JSMicro Semiconductor
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Description:-12 V, -16 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-16 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
12 to 22 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2x2-6L
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch, Battery charge in ce...
more info
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First Silicon - FTK4828D

MOSFET from First Silicon
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Description:60 V, 12 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
56 to 77 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
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Cystech Electronics - MTB020P03KQ8-0-TF-G

MOSFET from Cystech Electronics
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Description:-30 V, -12 to -5.6 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12 to -5.6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
18 to 40 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
more info
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PFC Device - PRM4R2N08CTB

MOSFET from PFC Device
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Description:80 V, 103 to 164 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
103 to 164 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.2 to 9.5 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
192 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM3202M3

MOSFET from uPI Semiconductor
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Description:30 V, 6 to 28 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 to 28 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
16 to 30 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3X3
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INJ0303AC1

MOSFET from Isahaya Electronics
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Description:-12 V, -3000 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3000 mA
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
50 to 180 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
switching
more info
SSM6P39TU Image
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Toshiba - SSM6P39TU

MOSFET from Toshiba
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Description:-20 V, 6.4 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
160 to 430 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Package:
UF6
Applications:
Power Management Switch Applications, High-Speed S...
more info
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