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MOSFETs - Page 365

18461 MOSFETs from 62 manufacturers meet your specification.
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Advanced Power Electronics Corp - AP12A390YT

MOSFET from Advanced Power Electronics Corp
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Description:120 V, 1.3 to 1.7 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1.3 to 1.7 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
390 to 600 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK-3x3
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESGNU06R17

MOSFET from Hunan Jingxin Microelectronics
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Description:60 V, 35 to 48 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 48 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 to 21 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM10N80F

MOSFET from JSMicro Semiconductor
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Description:800 V, 6.32 to 10 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.32 to 10 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.9 to 1.0 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
240 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
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First Silicon - FTK4806T

MOSFET from First Silicon
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Description:40 V, 19 to 30 A, N-Channel, P-Channel Enhancement mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
19 to 30 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
7.2 to 12 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN56
Industry:
Industrial, Commercial
Applications:
MB / VGA / Vcore, POL Applications, SMPS 2nd SR, U...
more info
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Cystech Electronics - MTE1D2N08RTL8-0-TK-G

MOSFET from Cystech Electronics
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Description:80 V, 27 to 242 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 to 242 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.2 to 1.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
more info
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PFC Device - PRM6R0N10N5

MOSFET from PFC Device
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Description:100 V, 69 to 109 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
69 to 109 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.8 to 7.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM3212M3

MOSFET from uPI Semiconductor
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Description:30 V, 6 to 27 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 to 27 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
16 to 30 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3X3
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
TJ90S04M3L Image
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Toshiba - TJ90S04M3L

MOSFET from Toshiba
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Description:-40 V, 172 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
3.4 to 6 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
180 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RQK2001HQDQA Image
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Renesas - RQK2001HQDQA

MOSFET from Renesas
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Description:200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
5000 to 6700 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
SP8K22HZG Image
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ROHM Semiconductor - SP8K22HZG

MOSFET from ROHM Semiconductor
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Description:45 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
33 to 64 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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