MOSFETs - Page 366

18461 MOSFETs from 62 manufacturers meet your specification.
Description:-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.6 to 6.8 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
22 to 103 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
Applications:
High and Low side switches for Inverter, High and ...
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-35 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
3.3 to 9.5 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8S
Industry:
Industrial, Commercial
Applications:
Smart phones, tablet PCs, and mobile computing - B...
more info
Description:-20 to 20 V, 9 to 20 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.6 to 10 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-30 to 30 V, 16 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.85 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
6250 to 8500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
Description:250 V, 364 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
132 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
570 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMPD
Industry:
Commercial, Industrial
Applications:
DC-DC Converters and Off-Line UPS, Primary-Side Sw...
more info
Description:-25 to 25 V, 15.3 to 30.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
11 to 36 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:650 V, 0.3 A, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
8000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Solid state relays, Converte...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 to -0.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1020 to 5000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.36 to 2.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT883
Applications:
Relay driver, High-speed line driver, High-side lo...
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
100 to 280 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.7 W
Temperature operating range:
150 Degree C
Package:
WSMini6-F1-B
Industry:
Industrial, Commercial
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
23 to 29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info

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