MOSFETs - Page 409

18462 MOSFETs from 62 manufacturers meet your specification.
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 66 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Automotive
Applications:
DC/DC converter, High Frequency Switching applicat...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.7 to 7.02 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
High power density DC/DC, Synchronous rectificatio...
more info
Description:-20 to 20 V, 24 to 24 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
99 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.3 to 3.9 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK8
Industry:
Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-20 to 20 V, 73 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-80 V
Drain Source Resistance:
18.5 to 28 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Applications:
Switching applications
more info
Description:150 V, 715 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
235 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
4.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
680 W
Temperature operating range:
-55 to 175 Degree C
Package:
SMPD
Industry:
Commercial, Industrial
Applications:
DC-DC Converters and Off-Line UPS, Primary-Side Sw...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
22 to 65 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 ºC
Package:
TSOT26
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:-200 to 200 V, -2 to 2 A, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-200 to 200 V
Drain Source Resistance:
7000 to 10000 milliohm
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC, VDFN
Industry:
Commercial, Industrial
Applications:
High-Voltage Pulser, Amplifiers, Buffers, Piezoele...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.4 to -2.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
48 to 250 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.49 to 4.63 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Relay driver, High-speed line driver, High-side lo...
more info
Description:8 V, Dual, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.55 to 6.10 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.54 to 3.5 W
Package:
CSP
more info
Description:40 V, 9 to 18 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
9 to 19 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 56 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
Applications:
BLDC Motor Control, Battery Power Management, DC-D...
more info

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