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MOSFETs - Page 411

18462 MOSFETs from 62 manufacturers meet your specification.
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First Silicon - FTK8810

MOSFET from First Silicon
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Description:-12 to 12 V, 7 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
20 to 35 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP-8
Industry:
Industrial, Commercial
Applications:
Battery protection, Load switch, Power management
more info
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Cystech Electronics - MTE240N25J3-0-T3-G

MOSFET from Cystech Electronics
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Description:250 V, 1.8 to 10 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.8 to 10 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
220 to 290 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
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PFC Device - PSM20N60CTB

MOSFET from PFC Device
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Description:600 V, 13 to 20 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.165 to 0.45 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
204 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
SSM6N36FE Image
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Toshiba - SSM6N36FE

MOSFET from Toshiba
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Description:20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-563
Industry:
Commercial, Industrial
Applications:
High-Speed Switching Applications
more info
RJK0854DPB Image
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Renesas - RJK0854DPB

MOSFET from Renesas
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Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
10 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RV4C020ZPHZG Image
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ROHM Semiconductor - RV4C020ZPHZG

MOSFET from ROHM Semiconductor
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Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
180 to 560 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
DFN1616-6W
Industry:
Commercial, Automotive
Applications:
Switching circuits, High speed line driver, High s...
more info
F4-11MR12W2M1_B76 Image
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Infineon Technologies - F4-11MR12W2M1_B76

MOSFET from Infineon Technologies
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Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Automotive
Applications:
High Frequency Switching application, DC/DC conver...
more info
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Vishay - SiRA50DP-T1-RE3

MOSFET from Vishay
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Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.86 to 1.45 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, OR-ing, High power dens...
more info
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onsemi - NVMFS5C646NLAFT1G

MOSFET from onsemi
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Description:-20 to 20 V, 15.7 to 33.7 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
93 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.8 to 6.3 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
79 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
STW23N80K5 Image
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STMicroelectronics - STW23N80K5

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 33 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
230 to 280 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
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