MOSFETs - Page 503

18465 MOSFETs from 62 manufacturers meet your specification.
Description:-30 V, -10.6 to 13.3 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10.6 to 13.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
10 to 17 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Industry:
Industrial, Commercial
more info
Description:30 V, 59 to 76 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
59 to 76 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.0 to 3.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
Description:-60 V, -40 to -50 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to -50 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
0.020 to 0.040 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
113 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Load Switch
more info
Description:-20 V, -4.1 to -6.5 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 to -6.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
20 to 40 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.56 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Notebook, Load Switch, Networking
more info
Description:60 V, 1.5 to 1.9 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.5 to 1.9 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
80 to 198 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
Description:-20 V, 10.4 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
46 to 150 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
SOT-323
Applications:
Power Management Switches
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9 to 11.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
70 to 160 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
Description:-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.75 to 1 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
600 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
Industry:
Space, Military
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
23 to 197 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.7 to 5.3 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
2.5 to 74 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 6 x 5F
Industry:
Industrial, Commercial
Applications:
CPU core power, Computer / server peripherals, POL...
more info

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