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MOSFETs - Page 518

18465 MOSFETs from 62 manufacturers meet your specification.
PJA3411 Image
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PANJIT Semiconductor - PJA3411

MOSFET from PANJIT Semiconductor
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Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
84 to 190 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Military
more info
RM6N800ALD Image
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Rectron Semiconductor - RM6N800ALD

MOSFET from Rectron Semiconductor
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Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
780 to 900 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
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Yangjie Electronic Technology - 2N7002KCDW

MOSFET from Yangjie Electronic Technology
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1900 to 3000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
Applications:
Battery operated systems, Solid-state relays, Dire...
more info
G180N06S2 Image
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Goford Semiconductor - G180N06S2

MOSFET from Goford Semiconductor
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
16.5 to 22 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Advanced Power Electronics Corp - AP3P020J

MOSFET from Advanced Power Electronics Corp
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Description:-30 V, -18.5 to -30 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18.5 to -30 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
20 to 40 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESN6534

MOSFET from Hunan Jingxin Microelectronics
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Description:30 V, 52 to 83 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 to 83 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.2 to 5.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM162N04

MOSFET from JSMicro Semiconductor
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Description:40 V, 162 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
162 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.0 to 5.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
171 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supply (SMPS), Uniterruptible Po...
more info
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First Silicon - FTK2120NPSOT563

MOSFET from First Silicon
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Description:20 V, 800 mA, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
800 mA
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
200 to 1500 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
312 mW
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Industrial, Commercial
Applications:
Notebook, Load Switch, Networking, Hand-held Instr...
more info
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Cystech Electronics - MTE55N20FP-0-UB-G

MOSFET from Cystech Electronics
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Description:200 V, 5.2 to 19 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.2 to 19 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
45 to 65 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Industry:
Industrial, Commercial
more info
SSM3K123TU Image
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Toshiba - SSM3K123TU

MOSFET from Toshiba
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Description:20 V, 13.6 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
19 to 66 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
Power Management Switch Applications, High-Speed S...
more info
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