MOSFETs - Page 99

18399 MOSFETs from 61 manufacturers meet your specification.
Description:-30 to 30 V, 49.0 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 to 15 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.34 to 0.40 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
231.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, High Current, High Speed Switch...
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
87 to 130 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
26 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8L
Industry:
Automotive
more info
Description:1200 V, 19 to 38 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 38 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
196 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.2 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1050 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
147 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
Description:300 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
440 to 550 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.8 to 20.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
62 to 183 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220 Fullpak
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:850 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
850 V
Drain Source Resistance:
6300 milliohm
Gate Source Voltage:
30 V
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
LED lighting, Switch-mode power supplies, Power fa...
more info
Description:30 V, 7.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.5 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252 (D-PAK)
Industry:
Commercial, Industrial
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.115 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
Description:100 V, 175 to 247 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
175 to 247 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
more info

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