MOSFETs - Page 102

18399 MOSFETs from 61 manufacturers meet your specification.
Description:-60 V, , P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
53 to 95 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
Description:40 V, -300 to 300 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-300 to 300 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.78 to 1.76 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.6 to 166 W
Temperature operating range:
-55 to 175 Degree C
Package:
HSOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
Description:-12 to 20 V, 27 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 178 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.66 to 3.75 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 175 Degree C
Package:
PQFN8
Industry:
Commercial, Industrial
Applications:
DC-DC Converters, System Voltage Rails
more info
Description:-25 to 25 V, 25 to 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-19.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 18000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8 (SWP)
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:1200 V Automotive-Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
107 to 153 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
13 to 23 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
517 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
Motor Control, EV Battery Chargers, High Voltage D...
more info
Description:60 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
60 to 110 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
150 Degree C
Package:
WSMini6-F1-B
Industry:
Industrial, Commercial
more info
Description:-10 to 25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
344 to 397 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
5.1 to 10.6 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
2113 W
Temperature operating range:
-40 to 175 Degree C
Package:
S3
Industry:
Industrial, Commercial
Applications:
Photovoltaic and Wind Inverter, EV/Battery charger...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 to 345 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
FAST SWITCHING, MOTOR CONTROLS, POWER SUPPLIES, Ae...
more info
Description:400 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.17 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
17000 to 25000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Solid state relays, Converte...
more info
Description:750 V, N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 66 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
23 to 50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
306 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info

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