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MOSFETs - Page 106

18399 MOSFETs from 61 manufacturers meet your specification.
SiRA02DP-T1-GE3 Image
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Vishay - SiRA02DP-T1-GE3

MOSFET from Vishay
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.65 to 2.7 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
71.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification, High Power Density DC/D...
more info
STW18NM80 Image
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STMicroelectronics - STW18NM80

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 70 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
250 to 295 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
DC to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
IXTA10P15T Image
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Littelfuse - IXTA10P15T

MOSFET from Littelfuse
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Description:-150 V, 36 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN2R5-40YLD Image
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Nexperia - PSMN2R5-40YLD

MOSFET from Nexperia
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Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
121 to 160 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.2 to 6.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
147 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Applications:
High-performance synchronous rectification, DC-to-...
more info
RQJ0305EQDQA Image
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Renesas - RQJ0305EQDQA

MOSFET from Renesas
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Description:-30 V, 3 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
110 to 230 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RS7N160BHTB1

MOSFET from ROHM Semiconductor
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Description:80 V, -160 to 160 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-160 to 160 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.2 to 3.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 to 160 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8S
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
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onsemi - NTMFS3D1N04XMT1G

MOSFET from onsemi
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Description:-20 to 20 V, 15.6 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 to 83 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.7 to 3.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Temperature operating range:
-55 to 175 Degree C
Package:
SO-8
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
DMP3048LSD Image
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Diodes Incorporated - DMP3048LSD

MOSFET from Diodes Incorporated
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Description:-12 to 12 V, 13.5 to 29.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
28 to 80 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
E3M0040120J2 Image
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Wolfspeed - E3M0040120J2

MOSFET from Wolfspeed
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Description:-8 to 19 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
46 to 63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
39 to 70 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
294 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7XL
Industry:
Automotive, Industrial, Commercial
Applications:
Motor Control, EV Battery Chargers, High Voltage D...
more info
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Panasonic Corporation - FK4B01110L

MOSFET from Panasonic Corporation
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Description:12 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.1 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
47 to 210 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.1 W
Temperature operating range:
-40 to 85 Degree C
Industry:
Industrial, Commercial
Applications:
General Switching
more info
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