MOSFETs - Page 111

18399 MOSFETs from 61 manufacturers meet your specification.
Description:40 V, -40 to 40 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.9 to 9.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN3333T8LSAB
Industry:
Industrial, Commercial, Automotive
more info
Description:-20 to 20 V, 61 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
193 to 273 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.76 to 0.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
121 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
Description:-6 to 6 V, 0.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
750 to 1500 Milliohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT323
Applications:
DC-DC Converters, Load Switch, Power Management Fu...
more info
Description:1200 V Automotive-Grade N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
83 to 114 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
21 to 35 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7XL
Industry:
Automotive, Industrial, Commercial
Applications:
Motor Control, EV Battery Chargers, High Voltage D...
more info
Description:30 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2000 to 6000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
SOT-723
Industry:
Industrial, Commercial
more info
Description:1200 V SiC MOSFET Power Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
113 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
395 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Industrial, Medical, Electric Vehicle
Applications:
Photovoltaic Inverter, Battery charger, Server pow...
more info
Description:-200 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
800 to 920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-200 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.175 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
7000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
Description:1200 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.5 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
217 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-3L
Industry:
Automotive, Industrial
Applications:
EV charging, Induction Heating, Motor Drive, Power...
more info

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