MOSFETs - Page 113

18399 MOSFETs from 61 manufacturers meet your specification.
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 to 20.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
160 to 442 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
187 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1900 to 45000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.25 W
Temperature operating range:
-65 to 150 Degree C
Package:
SOT-953
Industry:
Industrial, Commercial
Applications:
Load/Power switches, Power supply converter circui...
more info
Description:40 V, 17 to 25 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
48 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
8.5 to 17.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 to 48 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56 Dual
Industry:
Commercial, Industrial
Applications:
BLDC Motor Control, Battery Power Management, DC-D...
more info
Description:65 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
65 V
Drain Source Resistance:
8.5 to 16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
Description:-100 V, -0.95 to -1.2 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.95 to -1.2 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
0.5 to 0.6 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.38 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
Description:-60 V, -20 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
0.087 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info
Description:600 V, -2 to 2 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3 to 3.8 Ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial
more info
Description:12 V, 9.8 to 24.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
9.8 to 24.0 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.85 to 5.15 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
3.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Industrial, Commercial
more info
Description:1000 V, 6 A, N-Channel Enhancement Mode HERMETIC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
2.0 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254
Industry:
Industrial, Commercial
more info
Description:20 V, 4.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
16 to 30 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, Voltage Controll...
more info

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