MOSFETs - Page 107

18399 MOSFETs from 61 manufacturers meet your specification.
Description:-10 to 25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
89 to 123 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
15 to 35 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
652 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Industry:
Industrial, Commercial
Applications:
Photovoltaic Inverter, Battery charger, Server pow...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 5600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.725 to 5 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-200 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.26 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
8000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
Description:N-Channel SiC MOSFET for EV Charging Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
53 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
263 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial
Applications:
EV charging, Induction Heating, Motor Drive, Power...
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
57 to 98 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.9 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
39 to 100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.38 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
more info
Description:-10 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.016 to -0.008 A
Drain Source Breakdown Voltage:
-10 V
Drain Source Resistance:
180000 to 270000 milliohm
Gate Source Voltage:
-10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
8-Pin SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
110 to 280 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
290 to 360 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
101 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(D-PAK)
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info

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