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MOSFETs - Page 105

18399 MOSFETs from 61 manufacturers meet your specification.
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UN Semiconductor - UN300N23TE

MOSFET from UN Semiconductor
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Description:30 V, 0.9 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
350 to 1200 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, Voltage Controll...
more info
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FrelTec - SSF6114

MOSFET from FrelTec
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Description:60 V, 48 to 60 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 60 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10 to 17 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
115W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESPM3401

MOSFET from Hunan Jingxin Microelectronics
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Description:-30 V, -4.2 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
50 to 90 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM4953

MOSFET from JSMicro Semiconductor
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Description:-30 V, -5.3 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
54 to 89 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, DC/DC Converter
more info
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First Silicon - FTK3906DFN56

MOSFET from First Silicon
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Description:30 V, 74 W, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
51 to 80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4.6 to 8.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN56
Industry:
Industrial, Commercial
Applications:
MB / VGA / Vcore, POL Applications, SMPS 2nd SR
more info
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PFC Device - PRM6R0N06E

MOSFET from PFC Device
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Description:60 V, 50 to 95.3 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 95.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6 to 8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QN3103M6N

MOSFET from uPI Semiconductor
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Description:30 V, 11 to 64 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
11 to 64 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.0 to 9.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK-5x6
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INK0210AP1

MOSFET from Isahaya Electronics
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Description:60 V, 2.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.0 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.30 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-62
Industry:
Industrial, Commercial
Applications:
Switching
more info
XPQR3004PB Image
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Toshiba - XPQR3004PB

MOSFET from Toshiba
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Description:Automotive Qualified N-Channel Enhancement Mode Silicon MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.47 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
750 W
Temperature operating range:
-55 to 175 Degree C
Package:
L-TOGL
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, Motor Dr...
more info
IQE008N03LM5CG Image
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Infineon Technologies - IQE008N03LM5CG

MOSFET from Infineon Technologies
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 to 253 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.65 to 1.4 milli-ohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 89 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
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