The EPC7003 from Efficient Power Conversion is a Radiation Hard Enhancement Mode GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. This GaN transistor has a drain-to-source voltage of over 100 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 30 milli-ohms. It has a continuous drain current of up to 10 A and a pulsed drain current of less than 42 A. This GaN power transistor offers superior reliability performance in a space environment because there are no minority carriers for a single event, and as a wide band semiconductor there is less displacement for protons and neutrons, and additionally, there is no oxide to cause a breakdown. It also offers exceptionally high electron mobility and a low-temperature coefficient resulting in very low drain-source on-resistance values.

This RoHS-compliant GaN transistor has a lateral die structure that provides a very low gate charge and extremely fast switching times that enables faster power supply switching frequencies, thereby resulting in higher power densities, higher efficiencies, and more compact designs as compared to rad-hard MOSFETs.  It is available as a passivated die that measures 1.7 x 1.1 mm and is ideal for DC-DC power, motor drives, LiDAR, and ion thrusters, commercial satellite EPS & avionics, deep space probes, high-frequency radiation hard DC-DC conversion, and radiation hard motor drive applications.