The BIDW40N65H5 from Bourns is a Field Stop Trench Gate IGBT that is ideal for switched-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), inverters, welding converters, and photovoltaic applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.65 V, and a gate-emitter threshold voltage of 4.5 V. This IGBT has a DC collector current of up to 80 A and a gate-emitter leakage current of less than 400 nA. It utilizes novel Trench-Gate Field-Stop technology that provides greater control of dynamic characteristics, resulting in a lower collector emitter saturation voltage with minimal switching losses. It is an optimal choice for high performance conduction, even for high-speed switching applications. This RoHS-compliant IGBT is available in a through-hole package that measures 15.5 x 40.52 mm.