The DIM900M1HS12-PG500 from Dynex Semiconductor is a Field Stop Trench IGBT that is ideal for motor drives, power charging equipment, solar power, and electric vehicle applications. It has a collector-emitter voltage of less than 1200 V, a saturated collector-emitter voltage of 1.45 V, and a gate-emitter voltage of ±20 V. This IGBT has a DC collector current of up to 900 A and a gate-emitter leakage current of less than 0.5 µA. It offers a wide reverse bias safe operating area (RBSOA) with a short-circuit withstanding capability of 8 μs. This IGBT module is optimized for traction drives and other applications requiring high thermal cycling capability. It also incorporates an electrically isolated base plate and low inductance construction, enabling circuit designers to improve circuit layouts and utilize grounded heat sinks for safety. This IGBT is available as a module that measures 151.8 x 62 mm.