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AIKW50N65DH5

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AIKW50N65DH5 Image

The AIKW50N65DH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.66 to 2.10 V, DC Collector Current 53.5 to 80 A, DC Forward Current 27 to 40 A, Junction Temperature 175 Degree C. More details for AIKW50N65DH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AIKW50N65DH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.66 to 2.10 V
  • DC Collector Current
    53.5 to 80 A
  • DC Forward Current
    27 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    136 to 236 W
  • Package
    PG-TO247-3
  • Package Type
    Through Hole
  • Applications
    Off-board charger, On-board charger, DC/Dc converter, Power-Factor correction
  • RoHS Compliant
    Yes

Technical Documents
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