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IGB30N60T

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IGB30N60T Image

The IGB30N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.05 to 2.05 V, DC Collector Current 39 to 45 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGB30N60T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGB30N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.05 to 2.05 V
  • DC Collector Current
    39 to 45 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    187 W
  • Package
    D2PAK (TO-263)
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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