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IGP10N60T

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IGP10N60T Image

The IGP10N60T from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.05 to 2.05 V, DC Collector Current 18 to 24 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGP10N60T can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGP10N60T
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.05 to 2.05 V
  • DC Collector Current
    18 to 24 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    110 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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