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IGW30N60TP

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IGW30N60TP Image

The IGW30N60TP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.60 to 1.94 V, DC Collector Current 38 to 53 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGW30N60TP can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW30N60TP
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.60 to 1.94 V
  • DC Collector Current
    38 to 53 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    100 to 200 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Drives, solar inverters, uninterruptible power supplies, converters with medium switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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