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IGW40T120

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IGW40T120 Image

The IGW40T120 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.3 V, DC Collector Current 40 to 75 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.6 uA. More details for IGW40T120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW40T120
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.3 V
  • DC Collector Current
    40 to 75 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    270 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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