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IGW50N60TP

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IGW50N60TP Image

The IGW50N60TP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.60 to 1.94 V, DC Collector Current 61 to 80 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for IGW50N60TP can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGW50N60TP
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.60 to 1.94 V
  • DC Collector Current
    61 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    159.6 to 319.2 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Drives, solar inverters, uninterruptible power supplies, converters with medium switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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