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IHFW40N65R5S

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IHFW40N65R5S Image

The IHFW40N65R5S from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.50 to 2 V, DC Collector Current 59 A, DC Forward Current 40 to 44 A, Junction Temperature 175 Degree C. More details for IHFW40N65R5S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IHFW40N65R5S
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.50 to 2 V
  • DC Collector Current
    59 A
  • DC Forward Current
    40 to 44 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    79 to 108 W
  • Package
    PG-HSIP247-3-1
  • Package Type
    Through Hole
  • Applications
    Induction cooking, Inverterized microwave ovens, Resonant converters
  • RoHS Compliant
    Yes

Technical Documents
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