IHW20N65R5

Note : Your request will be directed to Infineon Technologies.

IHW20N65R5 Image

The IHW20N65R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 20 to 40 A, DC Forward Current 10 to 19 A, Junction Temperature 175 Degree C. More details for IHW20N65R5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IHW20N65R5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    20 to 40 A
  • DC Forward Current
    10 to 19 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    75 to 150 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Induction cooking, Inverterized microwave ovens, Resonant converters
  • RoHS Compliant
    Yes

Technical Documents

Latest IGBTs

View more products