The IHW20N65R5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 20 to 40 A, DC Forward Current 10 to 19 A, Junction Temperature 175 Degree C. More details for IHW20N65R5 can be seen below.