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IKFW50N65DH5

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IKFW50N65DH5 Image

The IKFW50N65DH5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.80 to 2.25 V, DC Collector Current 40 A, DC Forward Current 32 to 40 A, Junction Temperature 175 Degree C. More details for IKFW50N65DH5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW50N65DH5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.80 to 2.25 V
  • DC Collector Current
    40 A
  • DC Forward Current
    32 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    91 to 124 W
  • Package
    PG-HSIP247-3-1
  • Package Type
    Through Hole
  • Applications
    Residential and Commercial Aircon PFC, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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