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IKFW50N65ES5

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The IKFW50N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.70 V, DC Collector Current 69 A, DC Forward Current 59 to 74 A, Junction Temperature 175 Degree C. More details for IKFW50N65ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKFW50N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.70 V
  • DC Collector Current
    69 A
  • DC Forward Current
    59 to 74 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    93 to 127 W
  • Package
    PG-HSIP247-3-1
  • Package Type
    Through Hole
  • Applications
    Resonant converters, Uninterruptible power supplies, Welding converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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