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IKQ50N120CT2

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IKQ50N120CT2 Image

The IKQ50N120CT2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.75 to 2.30 V, DC Collector Current 50 to 100 A, DC Forward Current 50 to 100 A, Junction Temperature 175 Degree C. More details for IKQ50N120CT2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKQ50N120CT2
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.30 V
  • DC Collector Current
    50 to 100 A
  • DC Forward Current
    50 to 100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    151 to 652 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    GPD(General Purpose Drives), Servo Drives, Commercial Vehicles, Agricultural Vehicles, Three-level Solar String Inverter, Welding
  • RoHS Compliant
    Yes

Technical Documents
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