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IKW30N65EL5

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The IKW30N65EL5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.05 to 1.35 V, DC Collector Current 62 to 85 A, DC Forward Current 41 to 50 A, Junction Temperature 175 Degree C. More details for IKW30N65EL5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW30N65EL5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.05 to 1.35 V
  • DC Collector Current
    62 to 85 A
  • DC Forward Current
    41 to 50 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    114 to 227 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, Solar photovoltaic inverters, Welding machines
  • RoHS Compliant
    Yes

Technical Documents
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