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IKW50N65H5

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IKW50N65H5 Image

The IKW50N65H5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.10 V, DC Collector Current 56 to 80 A, DC Forward Current 27 to 40 A, Junction Temperature 175 Degree C. More details for IKW50N65H5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW50N65H5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.10 V
  • DC Collector Current
    56 to 80 A
  • DC Forward Current
    27 to 40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    152 to 305 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Solar converters, Uninterruptible power supplies, welding converters, converter swith high switching frequency convertrs
  • RoHS Compliant
    Yes

Technical Documents
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