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IKW75N65ET7

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IKW75N65ET7 Image

The IKW75N65ET7 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.35 to 1.65 V, DC Collector Current 78.5 to 80 A, DC Forward Current 74 to 80 A, Junction Temperature 175 Degree C. More details for IKW75N65ET7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW75N65ET7
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.65 V
  • DC Collector Current
    78.5 to 80 A
  • DC Forward Current
    74 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    167 to 333 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Drives -Servo -GPD, Industrial Power Supplies -Industrial UPS -Residential UPS, Energy Generation -Solar Central Inverter -Solar String Inverter -Solar Pump
  • RoHS Compliant
    Yes

Technical Documents
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